| PART |
Description |
Maker |
| KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
| KMM5364003CK KMM5364103CK |
(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W9832AASA 9832AASA |
32MB (4M x 64) SDRAM SO-DIMM MODULE(32MB (4M x 64)小型双列直插同步动态RAM模块)
From old datasheet system
|
Winbond Electronics Corp
|
| KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| MTCF032A MTCF004A MTCF016A MTCF010A MTCF008A |
32Mb CompactFlash Card(32Mb闪速存储器
4Mb CompactFlash Card(4MB闪速存储器
16Mb CompactFlash Card(16Mb闪速存储器
8Mb CompactFlash Card(8Mb闪速存储器
10Mb CompactFlash Card(10Mb闪速存储器 10MB的CompactFlash卡（10Mb闪速存储器卡）
|
Micron Technology, Inc.
|
| KMM5328004BSW |
8MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM53232000BK KMM53232000BKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
